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參數(shù)資料
| 型號： | HGTP14N40F3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 38 A, 420 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 147K |
| 代理商： | HGTP14N40F3VL |
2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
H
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Switching Characteristics
t
d(OFF)l
+
t
f(OFF)l
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
Device Marking
14N40FVL
14N40FVL
14N40FVL
Device
Package
TO-263AB
TO-263AB
TO-220AB
Reel Size
24mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
HGT1S14N40F3VLT
HGT1S14N40F3VLS
HGTP14N40F3VL
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
C
= 10mA,
V
GE
= 0
T
C
= 150
°
C
T
C
= 25
°
C
T
C
= -40
°
C
T
C
= 150
°
C
345
350
355
350
370
375
380
385
415
420
425
430
V
V
V
V
BV
CE(CL)
Collector to Emitter Clamp Breakdown
Voltage
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
C
= 10A,
R
G
= 0
I
C
= 1mA
I
GES
= ±1mA
V
CE
= 250V,
BV
ECS
BV
GES
I
CES
T
C
= 25
°
C
24
±12
-
-
-
-
-
-
-
-
-
-
-
V
V
μA
μA
μA
T
C
= 25
°
C
T
C
= 150
°
C
T
C
= 25
°
C
50
250
±10
-
I
GES
R
1
Gate to Emitter Leakage Current
Series Gate Resistance
V
GE
= ±10V
1000
I
C
= 10A,
V
GE
= 4.5V
I
C
= 1mA,
V
CE
= V
GE
T
C
= 25
°
C
T
C
= 150
°
C
T
C
= 25
°
C
T
C
= 150
°
C
-
-
1.3
1.4
-
-
2.0
2.3
2.0
-
V
V
V
V
V
GE(TH)
Gate to Emitter Threshold Voltage
1.0
0.5
Current Turn-Off Time-Inductive Load
I
C
= 6.5A,
R
G
= 25
,
L = 550μHy, V
CL
= 320V,
V
GE
= 5V, T
C
= 25
°
C
L = 2.3mHy,
V
GE
= 5V, See
Fig. 1 & 2
-
12
16
μs
SCIS
Self Clamped Inductive Switching
T
C
= 25
°
C
T
C
= 150
°
C
17
12
-
-
-
-
A
A
-
-
0.57
°
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGTP14N41G3VL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
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| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTP15N40C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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