參數(shù)資料
型號(hào): HGT1S14N37G3VLS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: TRANS PNP BIPOLAR 45V SOT323
中文描述: 25 A, N-CHANNEL IGBT, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁(yè)數(shù): 5/6頁(yè)
文件大小: 159K
代理商: HGT1S14N37G3VLS
2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
8
4
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
16
24
12
50
25
75
100
125
150
20
28
0
175
V
GE
= 5V
V
G
,
0.8
1.2
1.6
1.0
1.4
1.8
2.0
-50
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 1mA
V
CE
= V
GE
L
μ
A
0.1
10
100
25
50
75
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
125
1000
10000
1
175
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
μ
s
T
J
, JUNCTION TEMPERATURE (
o
C)
2
14
4
10
6
8
12
16
25
50
75
100
150
125
175
RESISTIVE t
OFF
INDUCTIVE t
OFF
RESISTIVE t
ON
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1k
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
5
10
15
20
25
0
800
1600
2000
1200
2400
400
FREQUENCY = 1MHz
C
RES
C
OES
C
IES
0
16
40
Q
G
, GATE CHARGE (nC)
4
0
56
V
G
,
8
8
24
32
48
2
6
I
G(REF)
= 1mA, R
L
= 1.865
, T
J
= 25
o
C
V
CE
= 12V
V
CE
= 6V
HGT1S14N37G3VLS, HGTP14N37G3VL
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