參數(shù)資料
型號: HEF4511BT
廠商: NXP Semiconductors N.V.
元件分類: 通用總線功能
英文描述: BCD to 7-segment latch-decoder-driver
封裝: HEF4511BP<SOT38-4 (DIP16)|<<http://www.nxp.com/packages/SOT38-4.html<1<Always Pb-free,;HEF4511BT<SOT109-1 (SO16)|<<http://www.nxp.com/packages/SOT109-1.html<1<week
文件頁數(shù): 6/20頁
文件大?。?/td> 191K
代理商: HEF4511BT
HEF4511B
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 11 November 2011
6 of 20
NXP Semiconductors
HEF4511B
BCD to 7-segment latch/decoder/driver
7. Limiting values
[1]
A destructive high current mode may occur if V
I
and V
O
are not constrained to the range V
SS
V
I
or V
O
V
DD
.
For DIP16 package: P
tot
derates linearly with 12 mW/K above 70
C.
For SO16 package: P
tot
derates linearly with 8 mW/K above 70
C.
[2]
[3]
8. Recommended operating conditions
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DD
supply voltage
I
IK
input clamping current
V
I
input voltage
I
OK
output clamping current
I
I/O
input/output current
I
OH
HIGH-level output current
I
DD
supply current
T
stg
storage temperature
T
amb
ambient temperature
P
tot
total power dissipation
Limiting values
Conditions
Min
0.5
-
0.5
-
-
Max
+18
10
V
DD
+ 0.5
10
10
-
50
+150
+125
Unit
V
mA
V
mA
mA
mA
mA
C
C
V
I
<
0.5 V or V
I
> V
DD
+ 0.5 V
V
O
<
0.5 V or V
O
> V
DD
+ 0.5 V
[1]
25
-
65
40
T
amb
= 125
C
DIP16 package
SO16 package
per output
[2]
-
750
500
100
mW
mW
mW
[3]
-
P
power dissipation
-
Table 5.
Symbol
V
DD
V
I
T
amb
t/
V
Recommended operating conditions
Parameter
supply voltage
input voltage
ambient temperature
input transition rise and fall rate
Conditions
Min
3
0
40
-
-
-
Typ
-
-
-
-
-
-
Max
15
V
DD
+125
3.75
0.5
0.08
Unit
V
V
C
s/V
s/V
s/V
in free air
V
DD
= 5 V
V
DD
= 10 V
V
DD
= 15 V
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