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| 型號： | HEF4104BT |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通用總線功能 |
| 英文描述： | Quad low-to-high voltage translator with 3-state outputs |
| 封裝： | HEF4104BP<SOT38-4 (DIP16)|<<http://www.nxp.com/packages/SOT38-4.html<1<Always Pb-free,;HEF4104BT<SOT109-1 (SO16)|<<http://www.nxp.com/packages/SOT109-1.html<1<week |
| 文件頁數(shù)： | 7/15頁 |
| 文件大?。?/td> | 156K |
| 代理商： | HEF4104BT |
HEF4104B
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 11 November 2011
7 of 15
NXP Semiconductors
HEF4104B
Quad low-to-high voltage translator with 3-state outputs
[1]
Typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (C
L
in pF).
[1]
V
DD
is the same as V
DD(A)
and V
DD(B)
.
t
PLZ
LOW to OFF-state
propagation delay
OE to Bn, Bn; see
Figure 6
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
OE to Bn, Bn; see
Figure 6
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
OE to Bn, Bn; see
Figure 6
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
-
-
-
70
55
55
135
105
110
ns
ns
ns
t
OFF-state to HIGH
propagation delay
-
-
-
195
95
80
395
195
165
ns
ns
ns
t
PZL
OFF-state to LOW
propagation delay
-
-
-
195
95
80
395
190
160
ns
ns
ns
Table 7.
T
amb
= 25
C; for test circuit see
Figure 7
; unless otherwise specified.
Symbol Parameter
Conditions
Dynamic characteristics
…continued
[1]
Min
Typ
Max
Unit
Table 8.
V
DD(A)
= V
DD(B)
; V
SS
= 0 V; t
r
= t
f
20 ns; T
amb
= 25
C.
Symbol Parameter
P
D
dynamic power
dissipation
Dynamic power dissipation
V
DD
[1]
5 V
10 V
15 V
Typical formula (
W)
P
D
= 3000
f
i
+
(f
o
C
L
)
V
DD2
P
D
= 12200
f
i
+
(f
o
C
L
)
V
DD2
P
D
= 31000
f
i
+
(f
o
C
L
)
V
DD2
where
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
(f
o
C
L
) = sum of the outputs;
V
DD
= supply voltage in V.
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