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參數(shù)資料
| 型號(hào)： | HCTS02DMSR |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 通用總線(xiàn)功能 |
| 英文描述： | Radiation Hardened Quad 2-Input NOR Gate |
| 中文描述： | HCT SERIES, QUAD 2-INPUT NOR GATE, CDIP14 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | HCTS02DMSR |
3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
45
pF
1
+125
o
C, -55
o
C
-
68
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V at 200K RAD, IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V at 200K RAD, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-5.0
+5.0
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V at 200K RAD, (Note 3)
+25
o
C
-
-
-
Input to Output
TPHL
VCC = 4.5V
+25
o
C
2
20
ns
TPLH
VCC = 4.5V
+25
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Specifications HCTS02MS
Spec Number
518841
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相關(guān)代理商/技術(shù)參數(shù) |
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| HCTS02HMSR | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate |
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| HCTS02MS | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate |
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