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參數(shù)資料
| 型號： | HCS10MS |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Triple 3-Input NAND Gate(抗輻射三3輸入與非門) |
| 中文描述： | 輻射加固三3輸入與非門（抗輻射三3輸入與非門） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 181K |
| 代理商： | HCS10MS |
5
Specifications HCS10MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
6, 8, 12
1, 2, 3, 4, 5, 7, 9, 10, 11,
13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
6, 8, 12
7
-
1, 2, 3, 4, 5, 9, 10,
11, 13, 14
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
6, 8, 12
14
1, 2, 3, 4, 5, 9,
10, 11, 13
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10K
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1K
±
5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
±
0.5V
6, 8, 12
7
1, 2, 3, 4, 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
518747
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