參數(shù)資料
型號(hào): HAT1048R
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET(P溝道功率MOSFET)
中文描述: 硅P通道功率MOS FET性(P溝道功率MOSFET的)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 32K
代理商: HAT1048R
HAT1048R
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
-30
V
Gate to source voltage
± 20
V
Drain current
-16
A
Drain peak current
Note1
-128
A
Body-drain diode reverse drain current I
DR
Channel dissipation
-16
A
Pch
Note2
2.5
W
Channel to Ambient Thermal
Impedance
t
ch-a
Note2
50
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Tstg
– 55 to + 150
°C
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