參數(shù)資料
型號: HAT1043
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET Power Switching
中文描述: 硅P通道功率MOS場效應(yīng)管電源開關(guān)
文件頁數(shù): 3/9頁
文件大?。?/td> 50K
代理商: HAT1043
HAT1043M
3
Main Characteristics
2.0
1.5
1.0
0
50
100
150
200
-0.1
-0.3
-1
-3
-10
-30
-100
-10
-8
-6
-4
-2
0
-2
-4
-6
-8
-10
C
Ambient Temperature Ta (
°
C)
Test Condition
When using the alumina ceramic board
(50x50x0.7mm),(PW
5s)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
Note 1 When using the alumina ceramic board
( 50x50x0.7mm)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
-100
-30
-10
-3
-1
-0.1
-0.03
-0.01
-0.3
10
μ
s
1ms
Operation in
this area is
limited by R
DS(on)
Ta = 25
°
C
1 shot pulse
PW=10ms(1sho)
-2 V
0.5
V = -1.5 V
-3 V
-10 V
-4 V
-10
-8
-6
-4
-2
0
-1
-2
-3
-4
-5
Tc = –25
°
C
25
°
C
75
°
C
V = -10 V
Pulse Test
Pulse Test
-2.5 V
5s
Noe1
100
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAT1043M 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET Power Switching
HAT1043M-EL 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 4.4A 6TSOP - Tape and Reel
HAT1043M-EL-E 功能描述:MOSFET P-CH 20V 4.4A 6TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
HAT1044M 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET Power Switching
HAT1044M-EL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET Power Switching