參數(shù)資料
型號(hào)： GS8321Z18GE-166I
廠商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
中文描述： 2M X 18 ZBT SRAM, 8 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 14/34頁(yè)
文件大?。?/td> 746K
代理商： GS8321Z18GE-166I
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8321Z18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06b 2/2006
14/34
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS8321Z18GE-200 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18GE-200I 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18GE-225 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18GE-225I 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18GE-250 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321Z18GE-166IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18GE-166V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8321Z18GE-200 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 36MBIT 2MX18 7.5NS/3NS 165FBGA - Trays
GS8321Z18GE-200I 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 36MBIT 2MX18 7.5NS/3NS 165FPBGA - Trays
GS8321Z18GE-200IV 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 7.5NS/3NS 165FBGA - Trays
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