參數(shù)資料
型號(hào)： GS8161FZ32BD-5.5I
廠商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 18Mb Flow Through Synchronous NBT SRAM
中文描述： 512K X 32 ZBT SRAM, 5.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù)： 13/28頁(yè)
文件大?。?/td> 629K
代理商： GS8161FZ32BD-5.5I
GS8161FZ18/32/36BD
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2006
13/28
2006, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
—
V
DD
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DD
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS8161FZ32BD-6.5 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ32BD-6.5I 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ32BD-7.5 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ32BD-7.5I 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ32BGD-5.5 18Mb Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161FZ32BD-6.5 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 6.5NS 165FPBGA - Trays
GS8161FZ32BD-6.5I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 6.5NS 165FPBGA - Trays
GS8161FZ32BD-7.5 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
GS8161FZ32BD-7.5I 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
GS8161FZ32BGD-5.5 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
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