參數(shù)資料
型號： GS8161FZ18BD-6.5
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 18Mb Flow Through Synchronous NBT SRAM
中文描述： 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù)： 12/28頁
文件大?。?/td> 629K
代理商： GS8161FZ18BD-6.5
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8161FZ18/32/36BD
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2006
12/28
2006, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS8161FZ18BD-6.5I 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ18BD-7.5 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ18BD-7.5I 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ18BGD-5.5 18Mb Flow Through Synchronous NBT SRAM
GS8161FZ18BGD-5.5I 18Mb Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161FZ18BD-7.5 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS 165FPBGA - Trays
GS8161FZ18BD-7.5I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS 165FPBGA - Trays
GS8161FZ18BGD-5.5 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
GS8161FZ18BGD-5.5I 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
GS8161FZ18BGD-6.5 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM
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