- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384347 > GS8161FZ18BD-5.5 (GSI TECHNOLOGY) 18Mb Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8161FZ18BD-5.5 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 18 ZBT SRAM, 5.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁(yè)數(shù)： | 16/28頁(yè) |
| 文件大?。?/td> | 629K |
| 代理商： | GS8161FZ18BD-5.5 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
GS8161FZ18/32/36BD
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 6/2006
16/28
2006, GSI Technology
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-5.5
-6.5
-7.5
Unit
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥
V
IH
o
r
≤
V
IL
Output
open
(x32/
x36)
Flow Through
I
DD
I
DDQ
235
20
245
20
205
15
215
15
190
15
200
15
mA
(x18)
Flow Through
I
DD
I
DDQ
215
10
225
10
190
10
200
10
175
10
185
10
mA
Standby
Current
ZZ
≥
V
DD
– 0.2 V
—
Flow Through
I
SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥
V
IH
or
≤
V
IL
—
Flow Through
I
DD
60
65
50
55
50
55
mA
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD3
, V
DD2
, V
DDQ3
, and V
DDQ2
operation.
All parameters listed are worst case scenario.
AC Electrical Characteristics
Parameter
Symbol
-5.5
-6.5
-7.5
Unit
Min
Max
Min
Max
Min
Max
Flow Through
Clock Cycle Time
tKC
5.5
—
6.5
—
7.5
—
ns
Clock to Output Valid
tKQ
—
5.5
—
6.5
—
7.5
ns
Clock to Output Invalid
tKQX
2.0
—
2.0
—
2.0
—
ns
Clock to Output in Low-Z
tLZ
1
2.0
—
2.0
—
2.0
—
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.5
—
ns
Clock LOW Time
tKL
1.5
—
1.5
—
1.7
—
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
3.0
—
3.8
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.5
—
3.0
—
3.8
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
ns
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8161FZ18BD-5.5I | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ18BD-6.5 | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ18BD-6.5I | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ18BD-7.5 | 18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ18BD-7.5I | 18Mb Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161FZ18BD-6.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ18BD-6.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
| GS8161FZ18BD-7.5 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS 165FPBGA - Trays |
| GS8161FZ18BD-7.5I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS 165FPBGA - Trays |
| GS8161FZ18BGD-5.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Flow Through Synchronous NBT SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。