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SILICON TRANSISTOR
GA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
DATA SHEET
Document No. D16494EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
2002
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FEATURES
Compact package
Resistors built-in type
Complementary to GN4xxx
ORDERING INFORMATION
PART NUMBER
PACKAGE
GA4xxx
SC-70
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
Note1
V
Collector Current (DC)
IC
0.1
A
Collector Current (pulse)
Note2
IC(pulse)
0.2
A
Total Power Dissipation
PT
0.15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note 1.
PART NUMBER
VEBO
(V)
MARK
R1
(k
Ω)
R2
(k
Ω)
PART NUMBER
VEBO
(V)
MARK
R1
(k
Ω)
R2
(k
Ω)
GA4A4M
10
AA1
10.0
GA4L4L
15
AK1
47.0
22.0
GA4F4M
10
AB1
22.0
GA4A4Z
5
AL1
10.0
GA4L4M
10
AC1
47.0
GA4F4Z
5
AM1
22.0
GA4L3M
10
AD1
4.7
GA4L4Z
5
AN1
47.0
GA4L3N
5
AE1
4.7
10.0
GA4F3M
10
AP1
2.2
GA4L3Z
5
AF1
4.7
GA4F3P
5
AQ1
2.2
10.0
GA4A3Q
5
AG1
1.0
10.0
GA4F3R
5
AR1
2.2
47.0
GA4A4P
5
AH1
10.0
47.0
GA4A4L
15
AS1
10.0
4.7
GA4F4N
5
AJ1
22.0
47.0
GA4L4K
25
AT1
47.0
10.0
Note 2. PW
≤ 10 ms, Duty Cycle ≤ 50%
PACKAGE DRAWING (Unit: mm)
2.1
±
0.1
1.25
±
0.1
3
21
2.0
± 0.2
0.65
0.3 +
0.1
0
0.65
0.3 +
0.1
0
0.3
0.9
± 0.1
0.15 +
0.1
0.05
0 to 0.1
Marking
EQUIVALENT CIRCUIT
2
R1
R2
1
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
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