參數(shù)資料
型號: ES29DL800E-90RTG
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 8Mbit(3米x 8/512K × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數(shù): 35/50頁
文件大?。?/td> 698K
代理商: ES29DL800E-90RTG
ESI
35
Rev. 1D January 5, 2006
ES29LV800D
Excel Semiconductor inc.
A
ddress
OE#
WE#
DATA
2AAh
CE#
Vcc
RY/BY#
t
WC
Erase Command Sequence (last two cycles)
VA
SA
VA
t
AS
t
VCS
t
BUSY
t
WHWH2
In
Progress
Complete
55h
30h
t
WP
t
CS
t
WPH
t
RB
t
CH
Read Status Data
555h for chip erase
10h for chip erase
t
DS
t
DH
NOTES :
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 21. Chip/Sector Erase Operation Timings
AC CHARACTERISTICS
t
AH
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