- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362774 > ES29DL640ET-90RTG (優(yōu)先(蘇州)半導(dǎo)體有限公司) 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | ES29DL640ET-90RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8Mbit（3米x 8/512K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 44/50頁 |
| 文件大?。?/td> | 698K |
| 代理商： | ES29DL640ET-90RTG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁當(dāng)前第44頁第45頁第46頁第47頁第48頁第49頁第50頁
ESI
44
Rev. 1D January 5, 2006
ES29LV800D
Excel Semiconductor inc.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
10
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
14
sec
Byte Program Time
6
150
us
Exclude system level overhead (Note 5)
Word Program Time
8
210
us
Chip Program Time (Note 3)
Byte Mode
6.3
18.9
sec
Word Mode
4.2
12.6
Notes:
1. Typical program and erase times assume the following conditions: 25
o
C, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90
o
C, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times
listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles
.
Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
- 1.0V
12.5 V
Input voltage with respect to Vss on all I/O pins
- 1.0V
Vcc + 1.0 V
Vcc Current
- 100 mA
+100 mA
Note:
Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
FBGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
FBGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
FBGA
3.9
4.7
pF
Table 17. LATCHUP CHARACTERISTICS
Table 18. TSOP, SO, AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested. 2. Test conditions TA = 25
o
C, f=1.0MHz.
Parameter Description
Test conditions
Min
Unit
Minimum Pattern Data Retention Time
150
o
C
10
Years
125
o
C
20
Years
Table 19. DATA RETENTION
Table 16. ERASE AND PROGRAMMING PERFORMANCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES29DL640FB-12RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640FT-80RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL800DB-80RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL800E-90RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL800FB-12RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DL640ET-90RTGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640ET-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640F-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640F-70RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DL640F-70WCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。