參數(shù)資料
型號: ES29BDS800E-90RTG
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 8Mbit(3米x 8/512K × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數(shù): 30/50頁
文件大?。?/td> 698K
代理商: ES29BDS800E-90RTG
ESI
30
Rev. 1D January 5, 2006
ES29LV800D
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 9. Read-Only Operations
Parameter
Description
Test Setup
Speed Options
Unit
JEDEC
Std.
70
90
120
t
AVAV
t
RC
Read Cycle Time(Note 1)
Min
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#,OE#=V
IL
Max
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE#=V
IL
Max
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
Note :
1. Not 100% tested
A
ddress
OE#
WE#
OUTPUTS
t
RC
Address Stable
High-Z
Output Valid
CE#
t
OEH
t
OH
t
DF
RESET#
RY/BY#
0V
t
ACC
t
RH
t
RH
t
CE
t
OE
Figure 16. Read Operation Timings
High-Z
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