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參數(shù)資料
| 型號： | ES1DE |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| 中文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC, SMAE, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 127K |
| 代理商： | ES1DE |
ES1A
E
THRU
ES1M
E
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Features
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x
x
High Temp Soldering: 260
q
C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
x
Operating Temperature: -50
q
C to +150
q
C
x
Storage Temperature: -50
q
C to +150
q
C
x
Maximum Thermal Resistance; 15
q
C/W Junction To Lead
MCC
Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
ES1AE
ES1BE
ES1CE
ES1DE
ES1GE
ES1JE
ES1KE
ES1ME
Electrical Characteristics @ 25
q
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ES1AE-DE
ES1GE-
J
E
ES1KE~
ME
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
ES1AE-DE
ES1GE-KE
ES1ME
Typical Junction
Capacitance
*Pulse test: Pulse width 200
P
sec, Duty cycle 2%
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
35V
70V
105V
140V
280V
420V
560V
700V
I
F(AV)
1.0A
T
J
= 75
q
C
I
FSM
30A
8.3ms, half sine
V
F
.9
7
5V
1.35V
1.
7
0V
I
FM
= 1.0A;
T
J
= 25
q
C*
I
R
5
P
A
100
P
A
T
J
= 25
q
C
T
J
= 100
q
C
T
rr
50ns
75
ns
100ns
45pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
C
J
Measured at
1.0MHz, V
R
=4.0V
omp
onents
20736 Marilla Street Chatsworth
M C C
Revision:
5
200
7
/0
6
/1
9
DO-214AC
(SMAE)
0.070”
0.090”
0.085”
SUGGESTED SOLDER
PAD LAYOUT
H
J
E
G
A
B
D
C
Cathode Band
TM
Micro Commercial Components
www.
mc c semi
.c om
DIMENSIONS
INCHES
MIN
.079
.050
MM
DIM
A
B
C .002 .008
D
---
E
.030
G
.189
H
.157
J
.090
MAX
.096
.075
MIN
2.01
1.27
.05
---
.76
4.80
4.00
2.29
MAX
2.44
1.90
.20
.51
1.52
5.30
4.57
2.92
NOTE
.02
.060
.208
.180
.115
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES1GE | 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| ES1BE | 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| ES1B | 1.0 Ampere Superfast Rectifiers(平均整流電流1.0安培超快速恢復(fù)整流器) |
| ES1C | 1.0 Ampere Superfast Rectifiers(平均整流電流1.0安培超快速恢復(fù)整流器) |
| ES1D | 1.0 Ampere Superfast Rectifiers(平均整流電流1.0安培超快速恢復(fù)整流器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES1D-E | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE：200V CURRENT： 1.0A |
| ES1D-E3 | 制造商:Vishay Intertechnologies 功能描述: |
| ES1D-E3/1 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R |
| ES1D-E3/11T | 功能描述:整流器 1.0 Amp 200 Volt 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ES1D-E3/13T | 功能描述:整流器 1.0 Amp 200 Volt 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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