參數(shù)資料
型號： EMD6
廠商： Rohm CO.,LTD.
英文描述： General purpose (dual digital transistors)
中文描述： 通用（雙數(shù)字晶體管）
文件頁數(shù)： 2/2頁
文件大?。?/td> 66K
代理商： EMD6
EMD6 / UMD6N / IMD6A
Transistors
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
R
1
Min.
50
50
5
100
3.29
250
4.7
0.5
0.5
600
0.3
6.11
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
V
CE
=
5V, I
C
=
1mA
I
C
/I
B
=
5mA/0.25mA
V
V
μ
A
μ
A
V
k
Typ. Max. Unit
Conditions
f
T
250
V
CE
=
10mA, I
E
=
5mA, f
=
100MHz
MHz
Transition frequency of the transistor
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Input resistance
!
Packaging specifications
Package
Code
TR
T148
3000
3000
Taping
Basic ordering
unit (pieces)
UMD6N
T2R
8000
EMD6
IMD6A
Type
!
Electrical characteristic curves
DTr
1
(NPN)
1k
D
F
COLLECTOR CURRENT : I
C
(A)
V
CE
=
5V
100
μ
200
μ
500
μ
1m
2m
5m
10m 20m
50m100m
500
200
100
50
20
10
5
2
1
Ta=100
C
25
C
40
C
Fig.1 DC current gain vs. collector
current
DTr
2
(PNP)
100
μ
200
μ
500
μ
1m
2m
5m
10m 20m
50m100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
C
C
V
COLLECTOR CURRENT : I
C
(A)
Ta=100
C
25
C
40
C
l
C
/l
B
=20
Fig.2 Collector-emitter saturation
voltage vs. collector current
V
CE
=
5V
100
μ
1m
10m
200
μ
2m
20m
500
μ
5m
50m
100m
1k
500
200
100
50
20
10
5
2
1
D
F
COLLECTOR CURRENT : I
C
(A)
40
C
C
Ta= 25
C
Fig.3 DC current gain vs. collector
current
l
C
/l
B
=20
500m
200m
100m
50m
20m
10m
5m
2m
1m
100
μ
1
1m
10m
200
μ
2m
20m
500
μ
5m
50m
100m
C
C
V
COLLECTOR CURRENT : I
C
(A)
Ta=100
C
25
C
40
C
Fig.4 Collector-emitter saturation
voltage vs. collector current
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