參數(shù)資料
型號(hào): EDD5104ADTA-7B
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits DDR SDRAM
中文描述: 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝: PLASTIC, TSOP2-66
文件頁(yè)數(shù): 31/49頁(yè)
文件大?。?/td> 568K
代理商: EDD5104ADTA-7B
EDD5104ADTA-E, EDD5108ADTA-E, EDD5116ADTA-E
Preliminary Data Sheet E0501E10 (Ver. 1.0)
31
A Read command to the consecutive Write command interval with the BST command
Destination row of the consecutive write
command
Bank
address
Issue the BST command. tBSTW (
tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
Issue the BST command. tBSTW (
tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued.
Row address State
Operation
1. Same
Same
ACTIVE
2. Same
Different
3. Different
Any
ACTIVE
IDLE
out0 out1
in0
in1
in2
in3
CK
/CK
DM
DQ
Command
t1
t0
t2
t3
t4
t5
t6
t7
t8
BL = 4
CL = 2
DQS
OUTPUT
INPUT
tBSTW (
tBSTZ)
High-Z
READ
WRIT
BST
NOP
NOP
tBSTZ (= CL)
READ to WRITE Command Interval
相關(guān)PDF資料
PDF描述
EDD5104ADTA-7B-E 512M bits DDR SDRAM
EDD5104ADTA-7BL 512M bits DDR SDRAM
EDD5108ADTA-6B-E 512M bits DDR SDRAM
EDD5116ADTA-6B-E 512M bits DDR SDRAM
EDD5108ADTA-7A-E 512M bits DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDD5104ADTA-7B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
EDD5104ADTA-7BL 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
EDD5104ADTA-7BL-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
EDD5104ADTA-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
EDD5108ABTA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM