參數(shù)資料
型號(hào)： E28F320J3A-110
廠商： INTEL CORP
元件分類： PROM
英文描述： 3 Volt Intel StrataFlash⑩ Memory
中文描述： 2M X 16 FLASH 2.7V PROM, 110 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 34/58頁
文件大小： 380K
代理商： E28F320J3A-110
28F128J3A, 28F640J3A, 28F320J3A
28
Preliminary
device will latch in address and data and program the specified location. The allowable addresses
are shown in
Table 20
or
Table 21
. See
Figure 14,
“
Protection Register Programming Flowchart
”
on page 37
Any attempt to address Protection Program commands outside the defined protection register
address space will result in a status register error (program error bit SR.4 will be set to 1).
Attempting to program a locked protection register segment will result in a status register error
(program error bit SR.4 and lock error bit SR.1 will be set to 1).
4.15.3
Locking the Protection Register
The user-programmable segment of the protection register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is programmed to 0 at the Intel factory to protect the
unique device number. Bit 1 is set using the Protection Program command to program
“
FFFD
”
to
the PR-LOCK location. After these bits have been programmed, no further changes can be made to
the values stored in the protection register. Protection Program commands to a locked section will
result in a status register error (program error bit SR.4 and Lock Error bit SR.1 will be set to 1).
Protection register lockout state is not reversible.
0667_06
NOTE:
A
0
is not used in x16 mode when accessing the protection register map (See
Table 20
for x16
addressing). For x8 mode A
0
is used (See
Table 21
for x8 addressing).
Figure 6. Protection Register Memory Map
4 Words
Factory Programmed
4 Words
User Programmed
1 Word Lock
88H
85H
84H
81H
80H
Word
Address
A[23 - 1]: 128 Mbit
A[22 - 1]: 64 Mbit
A[21 - 1]: 32 Mbit
相關(guān)PDF資料
PDF描述
E28F320J3A-115 Intel StrataFlash Memory (J3)
E28F320J3A-120 Intel StrataFlash Memory (J3)
E28F320J3A-125 Intel StrataFlash Memory (J3)
E28F320J3A-150 Intel StrataFlash Memory (J3)
E28F320J3C-115 Intel StrataFlash Memory (J3)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F320J3A110SL5FS 功能描述:IC FLASH 32MBIT 110NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
E28F320J3A-115 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
E28F320J3A-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
E28F320J3A-125 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
E28F320J3A-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
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