參數(shù)資料
型號(hào)： E28F320J3A-110
廠商： INTEL CORP
元件分類(lèi)： PROM
英文描述： 3 Volt Intel StrataFlash⑩ Memory
中文描述： 2M X 16 FLASH 2.7V PROM, 110 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁(yè)數(shù)： 30/58頁(yè)
文件大?。?/td> 380K
代理商： E28F320J3A-110
28F128J3A, 28F640J3A, 28F320J3A
24
Preliminary
4.9
Byte/Word Program Commands
Byte/Word program is executed by a two-cycle command sequence. Byte/Word program setup
(standard 40H or alternate 10H) is written followed by a second write that specifies the address and
data (latched on the rising edge of WE#). The WSM then takes over, controlling the program and
program verify algorithms internally. After the program sequence is written, the device
automatically outputs status register data when read (see
Figure 8,
“
Byte/Word Program
Flowchart
”
on page 31
). The CPU can detect the completion of the program event by analyzing the
STS pin or status register bit SR.7.
When program is complete, status register bit SR.4 should be checked. If a program error is
detected, the status register should be cleared. The internal WSM verify only detects errors for
“
1
”
s
that do not successfully program to
“
0
”
s. The CUI remains in read status register mode until it
receives another command.
Reliable byte/word programs can only occur when V
CC
and V
PEN
are valid. If a byte/word
program is attempted while V
PEN
≤
V
PENLK
, status register bits SR.4 and SR.3 will be set to
“
1.
”
Successful byte/word programs require that the corresponding block lock-bit be cleared. If a byte/
word program is attempted when the corresponding block lock-bit is set, SR.1 and SR.4 will be set
to
“
1.
”
4.10
Program Suspend Command
The Program Suspend command allows program interruption to read data in other flash memory
locations. Once the programming process starts (either by initiating a write to buffer or byte/word
program operation), writing the Program Suspend command requests that the WSM suspend the
program sequence at a predetermined point in the algorithm. The device continues to output status
register data when read after the Program Suspend command is written. Polling status register bits
SR.7 can determine when the programming operation has been suspended. When SR.7 = 1, SR.2
should also be set to
“
1
”
, indicating that the device is in the program suspend mode. STS in level
RY/BY# mode will also transition to V
OH
. Specification t
WHRH1
defines the program suspend
latency.
At this point, a Read Array command can be written to read data from locations other than that
which is suspended. The only other valid commands while programming is suspended are Read
Query, Read Status Register, Clear Status Register, Configure, and Program Resume. After a
Program Resume command is written, the WSM will continue the programming process. Status
register bits SR.2 and SR.7 will automatically clear and STS in RY/BY# mode will return to V
OL
.
After the Program Resume command is written, the device automatically outputs status register
data when read. V
PEN
must remain at V
PENH
and V
CC
must remain at valid V
CC
levels (the same
V
PEN
and
V
CC
levels used for programming) while in program suspend mode. Refer to
Figure 9,
“
Program Suspend/Resume Flowchart
”
on page 32
.
4.11
Set Read Configuration Command
This command is not support on this product. This device will default to the asynchronous page
mode. If this command is given to the device it will not effect the operation of the device.
相關(guān)PDF資料
PDF描述
E28F320J3A-115 Intel StrataFlash Memory (J3)
E28F320J3A-120 Intel StrataFlash Memory (J3)
E28F320J3A-125 Intel StrataFlash Memory (J3)
E28F320J3A-150 Intel StrataFlash Memory (J3)
E28F320J3C-115 Intel StrataFlash Memory (J3)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F320J3A110SL5FS 功能描述:IC FLASH 32MBIT 110NS 56TSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁(yè)面:1445 (CN2011-ZH PDF)
E28F320J3A-115 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
E28F320J3A-120 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
E28F320J3A-125 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
E28F320J3A-150 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*