元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
DMG4932LSD-13 | Diodes Inc | MOSFET 2N-CH 30V 9.5A SO8 | 3,085 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
DMG4932LSD-13 | Diodes Inc | MOSFET 2N-CH 30V 9.5A SO8 | 3,085 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | 2 個 N 溝道(雙) |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 9.5A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 15 毫歐 @ 9A,10V |
Id 時的 Vgs(th)(最大): | 2.4V @ 250µA |
閘電荷(Qg) @ Vgs: | 42nC @ 10V |
輸入電容 (Ciss) @ Vds: | 1932pF @ 15V |
功率 - 最大: | 1.19W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 8-SOIC(0.236",6.00mm 寬) |
供應(yīng)商設(shè)備封裝: | 8-SO |
包裝: | 剪切帶 (CT) |