分離式半導(dǎo)體產(chǎn)品 PMGD370XN,115品牌、價(jià)格、PDF參數(shù)

PMGD370XN,115 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
PMGD370XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 14,411 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD370XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 14,411 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD780SN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 60V SOT363 3,000 3,000:$0.11900
6,000:$0.11200
15,000:$0.10400
30,000:$0.09600
75,000:$0.09200
150,000:$0.08900
PMGD780SN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 60V SOT363 5,419 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD370XN,115 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: 2 個(gè) N 溝道（雙）
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 740mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 440 毫歐 @ 200mA，4.5V
Id 時(shí)的 Vgs(th)（最大）: 1.5V @ 250µA
閘電荷(Qg) @ Vgs: 650nC @ 4.5V
輸入電容 (Ciss) @ Vds: 37pF @ 25V
功率 - 最大: 410mW
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP，SC-88，SOT-363
供應(yīng)商設(shè)備封裝: 6-TSSOP
包裝: 剪切帶 (CT)