元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
BSO203P H | Infineon Technologies | MOSFET P-CH 20V 7A DSO-8 | 4,980 | 1:$1.79000 10:$1.53100 25:$1.37760 100:$1.25000 250:$1.12244 500:$0.96938 1,000:$0.81632 |
BSO203P H | Infineon Technologies | MOSFET P-CH 20V 7A DSO-8 | 2,500 | 2,500:$0.68877 5,000:$0.66326 12,500:$0.63775 25,000:$0.62500 62,500:$0.61224 |
BSO303P H | Infineon Technologies | MOSFET 2P-CH 30V 7A DSO-8 | 4,941 | 1:$1.77000 10:$1.51600 25:$1.36400 100:$1.23770 250:$1.11144 500:$0.95988 1,000:$0.80832 |
BSO303P H | Infineon Technologies | MOSFET 2P-CH 30V 7A DSO-8 | 4,941 | 1:$1.77000 10:$1.51600 25:$1.36400 100:$1.23770 250:$1.11144 500:$0.95988 1,000:$0.80832 |
BSO303P H | Infineon Technologies | MOSFET 2P-CH 30V 7A DSO-8 | 2,500 | 2,500:$0.68202 5,000:$0.65676 12,500:$0.63150 25,000:$0.61887 62,500:$0.60624 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | 2 個(gè) P 溝道(雙) |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 7A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 21 毫歐 @ 8.2A,4.5V |
Id 時(shí)的 Vgs(th)(最大): | 1.2V @ 100µA |
閘電荷(Qg) @ Vgs: | 39nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | 3750pF @ 15V |
功率 - 最大: | 1.6W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 8-SOIC(0.154",3.90mm 寬) |
供應(yīng)商設(shè)備封裝: | P-DSO-8 |
包裝: | 剪切帶 (CT) |