| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI1903DL-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 410MA SC70-6 | 565 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
| SI1903DL-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 410MA SC70-6 | 565 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
| SI1903DL-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 410MA SC70-6 | 0 | 3,000:$0.17670 6,000:$0.16530 15,000:$0.15390 30,000:$0.14535 75,000:$0.14250 150,000:$0.13680 |
| SI5933CDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1206-8 | 428 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI5933CDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1206-8 | 428 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI5933CDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1206-8 | 0 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | 2 個 P 溝道（雙） |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 410mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 995 毫歐 @ 410mA，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 1.8nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 270mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應商設備封裝: | SC-70-6 |
| 包裝: | Digi-Reel® |