| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PMDPB65UP,115 | NXP Semiconductors | MOSFET P-CH 20V DUAL SOT1118 | 572 | 1:$0.72000 10:$0.63200 25:$0.55840 100:$0.48650 250:$0.42352 500:$0.36050 1,000:$0.28875 |
| PMDPB65UP,115 | NXP Semiconductors | MOSFET P-CH 20V DUAL SOT1118 | 0 | 3,000:$0.25400 6,000:$0.23600 15,000:$0.22800 30,000:$0.21900 75,000:$0.21500 150,000:$0.21000 |
| 2N7002PS,115 | NXP Semiconductors | MOSFET N-CH DUAL 60V SOT-363 | 432 | 1:$0.48000 10:$0.34800 25:$0.27040 100:$0.20480 250:$0.14476 500:$0.11588 1,000:$0.08888 |
| 2N7002PS,115 | NXP Semiconductors | MOSFET N-CH DUAL 60V SOT-363 | 432 | 1:$0.48000 10:$0.34800 25:$0.27040 100:$0.20480 250:$0.14476 500:$0.11588 1,000:$0.08888 |
| 2N7002PS,115 | NXP Semiconductors | MOSFET N-CH DUAL 60V SOT-363 | 0 | 3,000:$0.07500 6,000:$0.06800 15,000:$0.06000 30,000:$0.05600 75,000:$0.05000 150,000:$0.04700 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) P 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 3.5A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 70 毫歐 @ 1A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 6nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 380pF @ 10V |
| 功率 - 最大: | 520mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-UDFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝: | 6-HUSON |
| 包裝: | 剪切帶 (CT) |