| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI6975DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 12V 8TSSOP | 0 | 3,000:$0.74250 |
| SI6973DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 20V 8TSSOP | 0 | 3,000:$0.74250 |
| SI4814BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.71550 |
| SI4967DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 8SOIC | 0 | 2,500:$0.71145 |
| SI4965DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 8V 8SOIC | 0 | 2,500:$0.69390 |
| SI7980DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 8A PPAK 8SOIC | 0 | 3,000:$0.68850 |
| SI4944DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$0.67905 |
| SI4569DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.67905 |
| SI7904DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 20V 1212-8 | 0 | 3,000:$0.67200 |
| SI7214DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 30V 1212-8 | 0 | 3,000:$0.67200 |
| SI7228DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PWRPAK 1212-8 | 0 | 3,000:$0.61600 |
| SIZ720DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 0 | 3,000:$0.60900 |
| SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) P 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4.3A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 27 毫歐 @ 5.1A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 450mV @ 5mA |
| 閘電荷(Qg) @ Vgs: | 30nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 830mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-TSSOP |
| 包裝: | 帶卷 (TR) |