| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| IXFN100N50Q3 | IXYS | MOSFET N-CH 500V 82A SOT-227 | 66 | 1:$43.17000 10:$40.36700 100:$35.00000 250:$32.66664 500:$31.03328 1,000:$29.86662 2,500:$28.93329 5,000:$27.99996 |
| IXFN44N100Q3 | IXYS | MOSFET N-CH 1000V 38A SOT-227 | 56 | 1:$43.17000 10:$40.36700 100:$35.00000 250:$32.66664 500:$31.03328 1,000:$29.86662 2,500:$28.93329 5,000:$27.99996 |
| IXFN62N80Q3 | IXYS | MOSFET N-CH 800V 49A SOT-227 | 34 | 1:$43.17000 10:$40.36700 100:$35.00000 250:$32.66664 500:$31.03328 1,000:$29.86662 2,500:$28.93329 5,000:$27.99996 |
| IXFN32N100Q3 | IXYS | MOSFET N-CH 1000V 28A SOT-227 | 92 | 1:$45.51000 10:$42.43500 100:$36.90000 250:$34.44000 500:$32.71800 1,000:$31.36500 2,500:$30.50400 5,000:$29.52000 |
| IXFN44N80Q3 | IXYS | MOSFET N-CH 800V 37A SOT-227 | 68 | 1:$45.51000 10:$42.43500 100:$36.90000 250:$34.44000 500:$32.71800 1,000:$31.36500 2,500:$30.50400 5,000:$29.52000 |
| 類別: | 半導(dǎo)體模塊 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 500V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 82A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 49 毫歐 @ 50A，10V |
| Id 時的 Vgs(th)（最大）: | 6.5V @ 8mA |
| 閘電荷(Qg) @ Vgs: | 255nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 13800pF @ 25V |
| 功率 - 最大: | 960W |
| 安裝類型: | 底座安裝 |
| 封裝/外殼: | SOT-227-4，miniBLOC |
| 供應(yīng)商設(shè)備封裝: | SOT-227B |
| 包裝: | 管件 |