半導(dǎo)體模塊 APTM100H35FT3G品牌、價(jià)格、PDF參數(shù)

APTM100H35FT3G • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
APTM100H35FT3G Microsemi Power Products Group MOSFET MODULE FULL BRIDGE SP3 0 10:$114.82200
APTM20DAM08TG Microsemi Power Products Group MOSFET N-CH 200V 208A SP4 0 10:$95.46600
APTM50DHM65TG Microsemi Power Products Group MOSFET MOD ASYMMETRIC BRIDGE SP4 0 10:$94.66200
APTM10DHM09TG Microsemi Power Products Group MOSFET MOD ASYMMETRIC BRIDGE SP4 0 10:$88.80700
APTM50DDA10T3G Microsemi Power Products Group MOSFET MOD DUAL BOOST CHOP SP3 0 14:$60.13571
APTM100H80FT1G Microsemi Power Products Group MOSFET MODULE FULL BRIDGE SP1 0 15:$58.07533
APTM10DSKM19T3G Microsemi Power Products Group MOSFET MOD DUAL BUCK CHOPPER SP3 0 17:$50.16529
APTC60SKM35T1G Microsemi Power Products Group MOSFET N-CH 600V 72A SP1 0 19:$48.94947
APTM100SK40T1G Microsemi Power Products Group MOSFET N-CH 1000V 20A SP1 0 22:$41.94909
APTC80SK15T1G Microsemi Power Products Group MOSFET N-CH 800V 28A SP1 0 24:$37.38292
APTC80DA15T1G Microsemi Power Products Group MOSFET N-CH 800V 28A SP1 0 24:$37.38292
APTM100H35FT3G • PDF參數(shù)
類(lèi)別: 半導(dǎo)體模塊
FET 型: 4 N 通道(半橋)
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 1000V(1kV)
電流 - 連續(xù)漏極(Id) @ 25° C: 22A
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: 420 毫歐 @ 11A,10V
Id 時(shí)的 Vgs(th)(最大): 5V @ 2.5mA
閘電荷(Qg) @ Vgs: 186nC @ 10V
輸入電容 (Ciss) @ Vds: 5200pF @ 25V
功率 - 最大: 390W
安裝類(lèi)型: 底座安裝
封裝/外殼: SP3
供應(yīng)商設(shè)備封裝: SP3
包裝: 散裝