| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSP149 L6327 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | 35,244 | 1:$1.16000 10:$1.03800 25:$0.91640 100:$0.82460 250:$0.71768 500:$0.64134 |
| BSP149 L6327 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | 34,000 | 1,000:$0.45810 2,000:$0.42756 5,000:$0.40618 10,000:$0.38939 25,000:$0.37870 50,000:$0.36648 |
| BSC0906NS | Infineon Technologies | MOSFET N-CH 30V 18A 8TDSON | 9,696 | 1:$1.30000 10:$1.16500 25:$1.02800 100:$0.92530 250:$0.80536 500:$0.71968 1,000:$0.56546 2,500:$0.53118 |
| BSC0906NS | Infineon Technologies | MOSFET N-CH 30V 18A 8TDSON | 9,696 | 1:$1.30000 10:$1.16500 25:$1.02800 100:$0.92530 250:$0.80536 500:$0.71968 1,000:$0.56546 2,500:$0.53118 |
| BSC0906NS | Infineon Technologies | MOSFET N-CH 30V 18A 8TDSON | 5,000 | 5,000:$0.45579 10,000:$0.43694 25,000:$0.42495 50,000:$0.41124 |
| IPB260N06N3 G | Infineon Technologies | MOSFET N-CH 60V 27A TO263-3 | 1,930 | 1:$1.13000 10:$1.01100 25:$0.89200 100:$0.80270 250:$0.69864 500:$0.62434 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 耗盡模式 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 660mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.8 歐姆 @ 660mA，10V |
| Id 時的 Vgs(th)（最大）: | 1V @ 400µA |
| 閘電荷(Qg) @ Vgs: | 14nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 430pF @ 25V |
| 功率 - 最大: | 1.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-261-4，TO-261AA |
| 供應(yīng)商設(shè)備封裝: | PG-SOT223-4 |
| 包裝: | 剪切帶 (CT) |