分離式半導(dǎo)體產(chǎn)品 BSC882N03MS G品牌、價(jià)格、PDF參數(shù)

BSC882N03MS G • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
BSC882N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 0 5,000:$0.64877
10,000:$0.62195
25,000:$0.60487
50,000:$0.58536
BSZ0902NSI Infineon Technologies MOSFET N-CH 30V 21A TSDSON-8 8,394 1:$1.82000
10:$1.62900
25:$1.43720
100:$1.29330
250:$1.12564
500:$1.00590
1,000:$0.79035
2,500:$0.74245
BSZ0902NSI Infineon Technologies MOSFET N-CH 30V 21A TSDSON-8 8,394 1:$1.82000
10:$1.62900
25:$1.43720
100:$1.29330
250:$1.12564
500:$1.00590
1,000:$0.79035
2,500:$0.74245
BSC882N03MS G • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 34V
電流 - 連續(xù)漏極(Id) @ 25° C: 100A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 2.6 毫歐 @ 30A，10V
Id 時(shí)的 Vgs(th)（最大）: 2V @ 250µA
閘電荷(Qg) @ Vgs: 55nC @ 10V
輸入電容 (Ciss) @ Vds: 4300pF @ 15V
功率 - 最大: 69W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應(yīng)商設(shè)備封裝: PG-TDSON-8
包裝: 帶卷 (TR)