分離式半導(dǎo)體產(chǎn)品 PMV60EN,215品牌、價(jià)格、PDF參數(shù)

PMV60EN,215 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
PMV60EN,215 NXP Semiconductors MOSFET N-CH 30V 4.7A SOT-23 12,000 3,000:$0.14260
6,000:$0.13570
PMV60EN,215 NXP Semiconductors MOSFET N-CH 30V 4.7A SOT-23 11,355 1:$0.56000
10:$0.47400
25:$0.41520
100:$0.35540
250:$0.30820
500:$0.26106
1,000:$0.20125
PMV60EN,215 NXP Semiconductors MOSFET N-CH 30V 4.7A SOT-23 11,355 1:$0.56000
10:$0.47400
25:$0.41520
100:$0.35540
250:$0.30820
500:$0.26106
1,000:$0.20125
PMV60EN,215 NXP Semiconductors MOSFET N-CH 30V 4.7A SOT-23 9,000 3,000:$0.17800
6,000:$0.16700
15,000:$0.15500
30,000:$0.14700
75,000:$0.14400
150,000:$0.13800
PMV60EN,215 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 4.7A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: 55 毫歐 @ 2A，10V
Id 時(shí)的 Vgs(th)（最大）: 2V @ 1mA
閘電荷(Qg) @ Vgs: 9.4nC @ 10V
輸入電容 (Ciss) @ Vds: 350pF @ 30V
功率 - 最大: 2W
安裝類型: 表面貼裝
封裝/外殼: TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝: TO-236AB
包裝: 帶卷 (TR)