分離式半導(dǎo)體產(chǎn)品 PHD20N06T,118品牌、價(jià)格、PDF參數(shù)

PHD20N06T,118 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
PHD20N06T,118 NXP Semiconductors MOSFET N-CH 55V 18A SOT428 0 10,000:$0.26000
BUK98180-100A,115 NXP Semiconductors MOSFET N-CH 100V 4.6A SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK98180-100A,115 NXP Semiconductors MOSFET N-CH 100V 4.6A SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK7880-55A,115 NXP Semiconductors MOSFET N-CH 55V SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
BUK7880-55A,115 NXP Semiconductors MOSFET N-CH 55V SOT-223 0 1:$0.72000
10:$0.60500
25:$0.53000
100:$0.45360
250:$0.39344
500:$0.33324
PHD20N06T,118 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 55V
電流 - 連續(xù)漏極(Id) @ 25° C: 18A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: 77 毫歐 @ 10A，10V
Id 時(shí)的 Vgs(th)（最大）: 4V @ 1mA
閘電荷(Qg) @ Vgs: 11nC @ 10V
輸入電容 (Ciss) @ Vds: 422pF @ 25V
功率 - 最大: 51W
安裝類型: 表面貼裝
封裝/外殼: TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝: D-Pak
包裝: 帶卷 (TR)