分離式半導體產品 BSS316N H6327品牌、價格、PDF參數

BSS316N H6327 • 品牌、價格
元器件型號 廠商 描述 數量 價格
BSS316N H6327 Infineon Technologies MOSFET N-CH 30V 1.4A SOT23 8,305 1:$0.62000
10:$0.44500
25:$0.35160
100:$0.26700
250:$0.18912
500:$0.15130
1,000:$0.11570
BSS316N H6327 Infineon Technologies MOSFET N-CH 30V 1.4A SOT23 6,000 3,000:$0.08900
6,000:$0.08010
15,000:$0.07120
30,000:$0.06675
75,000:$0.05919
150,000:$0.05563
BSS314PE H6327 Infineon Technologies MOSFET P-CH 30V 1.5A SOT23 5,960 1:$0.52000
10:$0.37000
25:$0.30560
100:$0.24650
250:$0.17748
500:$0.14298
1,000:$0.11093
BSS314PE H6327 Infineon Technologies MOSFET P-CH 30V 1.5A SOT23 5,960 1:$0.52000
10:$0.37000
25:$0.30560
100:$0.24650
250:$0.17748
500:$0.14298
1,000:$0.11093
BSS314PE H6327 Infineon Technologies MOSFET P-CH 30V 1.5A SOT23 3,000 3,000:$0.08874
6,000:$0.08381
15,000:$0.07642
30,000:$0.07149
75,000:$0.06409
150,000:$0.06163
BSS316N H6327 • PDF參數
類別: 分離式半導體產品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 1.4A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 160 毫歐 @ 1.4A，10V
Id 時的 Vgs(th)（最大）: 2V @ 3.7µA
閘電荷(Qg) @ Vgs: 0.6nC @ 5V
輸入電容 (Ciss) @ Vds: 94pF @ 15V
功率 - 最大: 500mW
安裝類型: 表面貼裝
封裝/外殼: TO-236-3，SC-59，SOT-23-3
供應商設備封裝: PG-SOT23-3
包裝: 剪切帶 (CT)