| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| STB80N20M5 | STMicroelectronics | MOSFET N-CH 200V 61A D2PAK | 0 | 1,000:$3.48300 2,000:$3.35400 5,000:$3.22500 10,000:$3.17340 25,000:$3.09600 |
| STW13N95K3 | STMicroelectronics | MOSFET N-CH 950V 10A 190W TO-247 | 407 | 1:$6.63000 10:$5.96300 100:$4.90250 250:$4.50500 500:$4.10750 1,000:$3.57750 2,500:$3.44500 5,000:$3.31250 10,000:$3.25950 |
| STB36NM60N | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | 500 | 1:$11.44000 10:$10.38200 25:$9.62640 100:$8.82000 250:$8.06400 500:$7.50960 |
| STP34NM60N | STMicroelectronics | MOSFET N-CH 600V 29A TO-220 | 895 | 1:$7.50000 10:$6.75000 25:$6.15000 100:$5.55000 250:$5.10000 500:$4.65000 1,000:$4.05000 2,500:$3.90000 5,000:$3.75000 |
| STW69N65M5 | STMicroelectronics | MOSFET N-CH 650V 58A TO-247 | 300 | 1:$19.56000 10:$17.78000 100:$15.11300 250:$13.77952 500:$12.89050 1,000:$11.82370 2,500:$11.37920 5,000:$11.02360 10,000:$10.66800 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 61A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 23 毫歐 @ 30.5A，10V |
| Id 時的 Vgs(th)（最大）: | 5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 104nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4329pF @ 50V |
| 功率 - 最大: | 190W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 帶卷 (TR) |