| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSZ0901NS | Infineon Technologies | MOSFET N-CH 30V S308 | 6,185 | 1:$2.46000 10:$2.10900 25:$1.89800 100:$1.72210 250:$1.54640 500:$1.33552 1,000:$1.12464 2,500:$1.01920 |
| IPD320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO252-3 | 12,218 | 1:$3.09000 10:$2.65200 25:$2.38640 100:$2.16560 250:$1.94460 500:$1.67942 1,000:$1.41424 |
| BSZ0901NS | Infineon Technologies | MOSFET N-CH 30V S308 | 5,000 | 5,000:$0.91377 10,000:$0.87863 25,000:$0.86105 50,000:$0.84348 |
| IPD320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO252-3 | 10,000 | 2,500:$1.19326 5,000:$1.14907 12,500:$1.10488 25,000:$1.08278 62,500:$1.06068 |
| BSZ16DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 10.9A 8TSDSON | 8,796 | 1:$2.43000 10:$2.08100 25:$1.87240 100:$1.69910 250:$1.52572 500:$1.31766 1,000:$1.10960 2,500:$1.00558 |
| IPD110N12N3 G | Infineon Technologies | MOSFET N-CH 120V 75A TO252-3 | 2,500 | 2,500:$0.89680 5,000:$0.86359 12,500:$0.83038 25,000:$0.81377 62,500:$0.79716 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 40A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 45nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2850pF @ 15V |
| 功率 - 最大: | 50W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-TDFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝: | PG-TSDSON-8（3.3x3.3） |
| 包裝: | 剪切帶 (CT) |