| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| IPD60R3K3C6 | Infineon Technologies | MOSFET N-CH 600V 1.7A TO252-3 | 4,213 | 1:$0.73000 10:$0.63300 25:$0.56680 100:$0.50010 250:$0.43344 500:$0.36674 1,000:$0.29173 |
| IPD60R3K3C6 | Infineon Technologies | MOSFET N-CH 600V 1.7A TO252-3 | 2,500 | 2,500:$0.24172 5,000:$0.22505 12,500:$0.21671 25,000:$0.20838 62,500:$0.20504 125,000:$0.20004 |
| BSS159N H6906 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT23 | 3,000 | 3,000:$0.23505 6,000:$0.21884 15,000:$0.21073 30,000:$0.20263 75,000:$0.19938 150,000:$0.19452 |
| BSP320S L6433 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | 7,975 | 1:$0.71000 10:$0.61000 25:$0.54600 100:$0.48180 250:$0.41756 500:$0.35332 1,000:$0.28105 |
| BSP320S L6433 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | 4,000 | 4,000:$0.23287 8,000:$0.21681 12,000:$0.20878 28,000:$0.20075 100,000:$0.19272 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.3 歐姆 @ 500mA，10V |
| Id 時的 Vgs(th)（最大）: | 3.5V @ 40µA |
| 閘電荷(Qg) @ Vgs: | 4.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 93pF @ 100V |
| 功率 - 最大: | 18.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | PG-TO252-3 |
| 包裝: | 剪切帶 (CT) |