| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| IPB017N06N3 G | Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | 2,000 | 1,000:$2.15194 2,000:$2.04435 5,000:$1.95980 10,000:$1.90600 25,000:$1.84452 |
| BUZ31 H3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | 1,990 | 1:$2.14000 10:$1.83500 25:$1.65120 100:$1.49820 250:$1.34532 500:$1.16186 |
| BUZ31 H3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | 1,990 | 1:$2.14000 10:$1.83500 25:$1.65120 100:$1.49820 250:$1.34532 500:$1.16186 |
| BUZ31 H3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | 1,000 | 1,000:$0.88668 2,000:$0.82553 5,000:$0.79495 10,000:$0.76438 25,000:$0.74909 50,000:$0.73380 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 180A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.7 毫歐 @ 100A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 196µA |
| 閘電荷(Qg) @ Vgs: | 275nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 23000pF @ 30V |
| 功率 - 最大: | 250W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-7，D²Pak（6 引線+接片），TO-263CB |
| 供應(yīng)商設(shè)備封裝: | PG-TO263-7 |
| 包裝: | 帶卷 (TR) |