分離式半導體產(chǎn)品 IRFR210TRLPBF品牌、價格、PDF參數(shù)

IRFR210TRLPBF • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 0 3,000:$0.34800
6,000:$0.32400
15,000:$0.31200
30,000:$0.30000
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,000 3,000:$0.91125
6,000:$0.87750
15,000:$0.84375
30,000:$0.82688
75,000:$0.81000
SI4434DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 250V 8-SOIC 7,150 1:$2.51000
25:$1.93880
100:$1.75910
250:$1.57960
500:$1.36420
1,000:$1.14880
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
IRFR210TRLPBF • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點: 標準
漏極至源極電壓(Vdss): 200V
電流 - 連續(xù)漏極(Id) @ 25° C: 2.6A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 1.5 歐姆 @ 1.6A,10V
Id 時的 Vgs(th)(最大): 4V @ 250µA
閘電荷(Qg) @ Vgs: 8.2nC @ 10V
輸入電容 (Ciss) @ Vds: 140pF @ 25V
功率 - 最大: 2.5W
安裝類型: 表面貼裝
封裝/外殼: TO-252-3,DPak(2 引線+接片),SC-63
供應商設備封裝: D-Pak
包裝: Digi-Reel®