分離式半導(dǎo)體產(chǎn)品 SI4490DY-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI4490DY-T1-GE3 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 8-SOIC 126 1:$1.84000
25:$1.42280
100:$1.29120
250:$1.15940
500:$1.00130
1,000:$0.84320
SI4490DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 8-SOIC 0 2,500:$0.76667
SIR800DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 243 1:$1.84000
25:$1.42280
100:$1.29120
250:$1.15940
500:$1.00130
1,000:$0.84320
SIR800DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 243 1:$1.84000
25:$1.42280
100:$1.29120
250:$1.15940
500:$1.00130
1,000:$0.84320
SIR800DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 0 3,000:$0.71145
6,000:$0.68510
15,000:$0.65875
30,000:$0.64558
75,000:$0.63240
IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK 800 1:$1.82000
25:$1.43720
100:$1.29330
250:$1.12564
IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK 800 1:$1.82000
25:$1.43720
100:$1.29330
250:$1.12564
SI4490DY-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 200V
電流 - 連續(xù)漏極(Id) @ 25° C: 2.85A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 80 毫歐 @ 4A，10V
Id 時(shí)的 Vgs(th)（最大）: 2V @ 250µA
閘電荷(Qg) @ Vgs: 42nC @ 10V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: 1.56W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 剪切帶 (CT)