元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PSMN4R3-80PS,127 | NXP Semiconductors | MOSFET N-CH 80V 120A TO220 | 443 | 1:$2.83000 10:$2.55900 25:$2.28520 100:$2.05670 250:$1.82820 500:$1.59968 1,000:$1.32545 2,500:$1.23404 5,000:$1.18833 |
PSMN2R2-40BS,118 | NXP Semiconductors | MOSFET N-CH 40V 100A D2PAK | 300 | 1:$2.81000 10:$2.53400 25:$2.27000 100:$2.04110 250:$1.81240 |
PSMN2R2-40BS,118 | NXP Semiconductors | MOSFET N-CH 40V 100A D2PAK | 300 | 1:$2.81000 10:$2.53400 25:$2.27000 100:$2.04110 250:$1.81240 |
類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 標(biāo)準(zhǔn) |
漏極至源極電壓(Vdss): | 80V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 4.3 毫歐 @ 25A,10V |
Id 時(shí)的 Vgs(th)(最大): | 4V @ 1mA |
閘電荷(Qg) @ Vgs: | 111nC @ 10V |
輸入電容 (Ciss) @ Vds: | 8161pF @ 40V |
功率 - 最大: | 306W |
安裝類(lèi)型: | 通孔 |
封裝/外殼: | TO-220-3 |
供應(yīng)商設(shè)備封裝: | TO-220AB |
包裝: | 管件 |