| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PMV31XN,215 | NXP Semiconductors | MOSFET N-CH 20V 5.9A SOT-23 | 29,529 | 1:$0.56000 10:$0.47400 25:$0.41520 100:$0.35540 250:$0.30820 500:$0.26106 1,000:$0.20125 |
| BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 11,488 | 1:$0.62000 10:$0.52200 25:$0.45760 100:$0.39180 250:$0.33984 500:$0.28784 1,000:$0.22190 |
| PMR400UN,115 | NXP Semiconductors | MOSFET N-CH 30V 0.8A SOT416 | 3,263 | 1:$0.46000 10:$0.36100 25:$0.30480 100:$0.24840 250:$0.20572 500:$0.16994 1,000:$0.12728 |
| PSMN9R0-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 46A LL LFPAK | 4,270 | 1:$0.56000 10:$0.47600 25:$0.41680 100:$0.35690 250:$0.30956 500:$0.26218 |
| PMR370XN,115 | NXP Semiconductors | MOSFET N-CH 30V 0.84A SOT416 | 5,265 | 1:$0.46000 10:$0.36100 25:$0.30480 100:$0.24840 250:$0.20572 500:$0.16994 1,000:$0.12728 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.9A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 37 毫歐 @ 1.5A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1.5V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 5.8nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 410pF @ 20V |
| 功率 - 最大: | 2W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應(yīng)商設(shè)備封裝: | TO-236AB |
| 包裝: | 剪切帶 (CT) |