分離式半導(dǎo)體產(chǎn)品 PSMN6R0-30YLB,115品牌、價(jià)格、PDF參數(shù)

PSMN6R0-30YLB,115 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
PSMN6R0-30YLB,115 NXP Semiconductors MOSFET N-CH 30V LFPAK 0 1,500:$0.24786
3,000:$0.22599
7,500:$0.21141
10,500:$0.19683
37,500:$0.18662
75,000:$0.18225
150,000:$0.17496
PMN20EN,115 NXP Semiconductors MOSFET N-CH 30V SC-74 10,830 1:$0.46000
10:$0.39100
25:$0.34280
100:$0.29360
250:$0.25460
500:$0.21566
1,000:$0.16625
PMN20EN,115 NXP Semiconductors MOSFET N-CH 30V SC-74 10,830 1:$0.46000
10:$0.39100
25:$0.34280
100:$0.29360
250:$0.25460
500:$0.21566
1,000:$0.16625
PMN20EN,115 NXP Semiconductors MOSFET N-CH 30V SC-74 9,000 3,000:$0.14700
6,000:$0.13800
15,000:$0.12800
30,000:$0.12200
75,000:$0.11900
150,000:$0.11400
PSMN6R0-30YLB,115 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 71A
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: 6.5 毫歐 @ 20A,10V
Id 時(shí)的 Vgs(th)(最大): 1.95V @ 1mA
閘電荷(Qg) @ Vgs: 19nC @ 10V
輸入電容 (Ciss) @ Vds: 1088pF @ 15V
功率 - 最大: 58W
安裝類型: 表面貼裝
封裝/外殼: SC-100,SOT-669,4-LFPAK
供應(yīng)商設(shè)備封裝: LFPAK,Power-SO8
包裝: 帶卷 (TR)
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