元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
PSMN1R3-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 7,193 | 1:$1.52000 10:$1.34000 25:$1.20960 100:$1.05840 250:$0.92820 500:$0.82320 |
BUK6607-55C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,323 | 1:$1.64000 10:$1.47700 25:$1.32320 100:$1.18970 250:$1.05636 |
BUK6607-55C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,000 | 800:$0.81023 1,600:$0.74356 2,400:$0.69228 5,600:$0.66664 20,000:$0.64100 40,000:$0.63074 80,000:$0.61536 |
BSP89,115 | NXP Semiconductors | MOSFET N-CH 240V 375MA SOT223 | 63,000 | 1,000:$0.25600 2,000:$0.23200 5,000:$0.21600 10,000:$0.20800 25,000:$0.20000 50,000:$0.19700 100,000:$0.19200 |
BUK9607-30B,118 | NXP Semiconductors | MOSFET N-CH 30V 75A D2PAK | 4,000 | 800:$0.80095 1,600:$0.72375 2,400:$0.67550 5,600:$0.64173 20,000:$0.61760 40,000:$0.59830 80,000:$0.57900 |
BUK9612-55B,118 | NXP Semiconductors | MOSFET N-CH 55V 75A D2PAK | 14,143 | 1:$1.74000 10:$1.53900 25:$1.38960 100:$1.21590 250:$1.06632 |
類別: | 分離式半導體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 1.3 毫歐 @ 15A,10V |
Id 時的 Vgs(th)(最大): | 2.15V @ 1mA |
閘電荷(Qg) @ Vgs: | 100nC @ 10V |
輸入電容 (Ciss) @ Vds: | 6227pF @ 12V |
功率 - 最大: | 121W |
安裝類型: | 表面貼裝 |
封裝/外殼: | SOT1023,4-LFPAK |
供應商設備封裝: | LFPAK,Power-SO8 |
包裝: | 剪切帶 (CT) |