| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN1R3-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 1,500 | 1,500:$0.66103 |
| BUK664R6-40C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,000 | 800:$0.81023 1,600:$0.74356 2,400:$0.69228 5,600:$0.66664 20,000:$0.64100 40,000:$0.63074 80,000:$0.61536 |
| BSS192,115 | NXP Semiconductors | MOSFET P-CH 240V 0.2A SOT89 | 6,207 | 1:$0.70000 10:$0.61400 25:$0.54240 100:$0.47260 250:$0.41140 500:$0.35020 |
| BSS192,115 | NXP Semiconductors | MOSFET P-CH 240V 0.2A SOT89 | 6,207 | 1:$0.70000 10:$0.61400 25:$0.54240 100:$0.47260 250:$0.41140 500:$0.35020 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.3 毫歐 @ 15A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 100nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6227pF @ 12V |
| 功率 - 最大: | 121W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SOT1023，4-LFPAK |
| 供應(yīng)商設(shè)備封裝: | LFPAK，Power-SO8 |
| 包裝: | 帶卷 (TR) |