元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
PSMN2R6-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 1,270 | 1:$0.98000 10:$0.85900 25:$0.75880 100:$0.66140 250:$0.57572 500:$0.49008 |
PSMN1R7-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 100A LFPAK | 1,443 | 1:$1.22000 10:$1.07700 25:$0.97240 100:$0.85080 250:$0.74608 500:$0.66170 |
BSP126,115 | NXP Semiconductors | MOSFET N-CH 250V 375MA SOT223 | 5,000 | 1,000:$0.31368 2,000:$0.30845 |
PSMN2R6-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 1,270 | 1:$0.98000 10:$0.85900 25:$0.75880 100:$0.66140 250:$0.57572 500:$0.49008 |
BSP126,135 | NXP Semiconductors | MOSFET N-CH 250V 375MA SOT223 | 3,985 | 1:$0.94000 10:$0.83400 25:$0.75280 100:$0.65870 250:$0.57768 500:$0.51234 1,000:$0.40517 |
PSMN2R6-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 0 | 1,500:$0.38064 3,000:$0.34496 7,500:$0.32117 10,500:$0.30927 37,500:$0.29737 75,000:$0.29262 150,000:$0.28548 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 2.8 毫歐 @ 25A,10V |
Id 時的 Vgs(th)(最大): | 1.95V @ 1mA |
閘電荷(Qg) @ Vgs: | 39nC @ 10V |
輸入電容 (Ciss) @ Vds: | 2435pF @ 15V |
功率 - 最大: | 106W |
安裝類型: | 表面貼裝 |
封裝/外殼: | SC-100,SOT-669,4-LFPAK |
供應(yīng)商設(shè)備封裝: | LFPAK,Power-SO8 |
包裝: | Digi-Reel® |