| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI3495DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 5.3A 6-TSOP | 0 | 3,000:$0.45500 |
| SI7388DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK 8SOIC | 0 | 3,000:$0.45220 |
| SI7810DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 1212-8 PPAK | 0 | 1:$1.23000 25:$0.96920 100:$0.87210 250:$0.75904 500:$0.67830 1,000:$0.53295 |
| SI7810DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 1212-8 PPAK | 0 | 1:$1.23000 25:$0.96920 100:$0.87210 250:$0.75904 500:$0.67830 1,000:$0.53295 |
| SI7810DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V 1212-8 PPAK | 0 | 3,000:$0.45220 6,000:$0.42959 15,000:$0.41183 30,000:$0.40052 75,000:$0.38760 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.3A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 24 毫歐 @ 7A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 750mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 38nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSOP（0.065"，1.65mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 6-TSOP |
| 包裝: | 帶卷 (TR) |