| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIJ400DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK SO-8L | 0 | 3,000:$0.67500 |
| SIRA12DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 25A SO8 PWR PK | 0 | 3,000:$0.39200 6,000:$0.37240 15,000:$0.35700 30,000:$0.34720 75,000:$0.33600 |
| SI4090DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 0 | 2,500:$0.60200 5,000:$0.57190 12,500:$0.54825 25,000:$0.53320 62,500:$0.51600 |
| SI4646DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.42000 |
| SI7682DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.41860 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 32A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 4 毫歐 @ 20A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 150nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 7765pF @ 15V |
| 功率 - 最大: | 69.4W |
| 安裝類型: | * |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |