| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7230DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PWRPAK 1212-8 | 0 | 3,000:$0.48720 |
| SIR788DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 60A SO-8 | 82 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| SIS476DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A 1212-8 PWR | 0 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| SIRA06DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A SO8 PWR PK | 82 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| SIRA06DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A SO8 PWR PK | 82 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 9A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 12 毫歐 @ 14A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 20nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |