| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| IRL510STRLPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 0 | 800:$0.74534 |
| SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 3,000 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 3,000 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 0 | 3,000:$0.13950 6,000:$0.13050 15,000:$0.12150 30,000:$0.11475 75,000:$0.11250 150,000:$0.10800 |
| SI1401EDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH F-D 12V SC-70-6 | 0 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SQ1421EEH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 1.6A SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.6A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 540 毫歐 @ 3.4A，5V |
| Id 時的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 6.1nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 250pF @ 25V |
| 功率 - 最大: | 3.7W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應商設(shè)備封裝: | D2PAK |
| 包裝: | 帶卷 (TR) |